([eiieu ^smi-donduetoi ij^ioducu, one, 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC2502 \\n ? collector-emitter sustaining voltage- : vceo(susr 400v(min) ? fast switching speed ? collector-emitter saturation voltage- : vce(satr 0.7v(max.)@ lc= 3a applications ? designed for use in high-voltage, high-speed , power switching in inductive circuit, they are particularly suited for 115 and 220v switchmode applications such as swit- ching regulator's, inverters. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @ tc=25r junction temperature storage temperature range value 500 400 7 6 12 2 50 150 -55-150 unit v ' v v a a a w 'c "c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 2.5 unit r/w \ i t liq u i i 1 1 h 1 k 1 1 _ c~| -j ? b p. ?? v '?! r^ery i - h c i v dem a b r d f g h j k l q r s u v 1 - pin < 1. base i. collect or s.ftdltter to-220c package ,,,-f l d - mm mm 15.50 9.90 4.20 0.70 3.40 4.98 2,68 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 max 15.90 10.20 i.50 0.90 3,70 5.18 2.90 o.ao 13.40 1>43 2.90 2.70 1,35 (5.65 8.(?> * s -l..j n.i soini-coijiluctors reserves the right lo change test conditions, parameter limits and package dimensions without notiee. intbrmation liirnished hy n.i seini-conductors is helievcd to he both aceurate and reliable at ilie time ol'coin in press. i louever, n.i seini-conjuetors assumes no responsibilil\r any errors or omissions discovered in its use. n.i semi-condiielors enauira.ues customers to \erity that datasheets are current before placing orders. quali^y semi-conductors
silicon npn power transistor 2SC2502 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat) vse(sat) icbo iceo iebo hpe-1 hfe-2 fi parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= 50ma; ib= 0 lc= 3a; ib= 0.3a lc= 3a; ib= 0.3a vcb= 500v; ie= 0 vce= 320v; ib= 0 veb= 7v; lc= 0 lc= 3a; vce= 2v lc= 6a; vce= 2v lc=06a;vce=1qv;f= 1mhz min 400 15 8 10 typ. max 0.7 1.5 100 100 1.0 unit v v v u a u a ma mhz switching times 'on tstg tf turn-on time storage time fall time lc= 3a, ib1= -is2= 0.6a rl= 10n;vcc=30v 1.0 3.0 0.7 u s m s m s pulso tcst:pulso wi dth=3()()us, duty cuty cycle<^. 0%
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